A change of etch rate associated with the amorphous to crystalline transition in CVD layers of silicon

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Boxall, B. A. (1977). A change of etch rate associated with the amorphous to crystalline transition in CVD layers of silicon. Solid State Electronics, 20(10), 873–874. https://doi.org/10.1016/0038-1101(77)90177-0

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