Cite
CITATION STYLE
APA
Boxall, B. A. (1977). A change of etch rate associated with the amorphous to crystalline transition in CVD layers of silicon. Solid State Electronics, 20(10), 873–874. https://doi.org/10.1016/0038-1101(77)90177-0
Register to see more suggestions
Mendeley helps you to discover research relevant for your work.
Already have an account? Sign in
Sign up for free