Change in shape of oxygen precipitate grown by thermal annealing

  • Sakai K
  • Yamagami T
  • Ojima K
  • 2


    Mendeley users who have this article in their library.
  • 1


    Citations of this article.


The shape of the oxygen precipitate in Si wafers generated by thermal annealing takes various forms depending on thermal annealing time and temperature. In this experiment, we observed, in detail, the shape of the oxygen precipitate in a Cz-Si sample after two-step annealing at different thermal annealing times by transmission electron microscopy (TEM). We found that the precipitate shape changed from octahedral to polyhedral to octahedral. Moreover, a lot of punch-out dislocations were generated with this change. This shape change was considered from the viewpoint of thermodynamics.

Get free article suggestions today

Mendeley saves you time finding and organizing research

Sign up here
Already have an account ?Sign in

Find this document


  • K. Sakai

  • T. Yamagami

  • K. Ojima

Cite this document

Choose a citation style from the tabs below

Save time finding and organizing research with Mendeley

Sign up for free