Characterisation of JSR's spin-on hardmask FF-02

  • Das A
  • Le Q
  • Furukawa Y
 et al. 
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Some of the spin-on interlayer dielectrics (ILD) with dielectric constant k below 2.3, targeted for the 65 nm node and below, are available with their spin-on hard masks (SoHM) to reduce the total effective capacitance and to provide high selectivity to their respective ILDs during integration. In this work, FF-02, JSR's SoHM is characterised. Its thermal stability, chemical compatibility to stripping solutions and resistance to moisture are investigated. Methods to seal the surface of FF-02 to chemicals are explored. Electrical properties including the dielectric constant, leakage current and breakdown fields are evaluated in planar capacitors and in single damascene structures. © 2003 Elsevier B.V. All rights reserved.

Author-supplied keywords

  • Electrical properties
  • FF-02 (JSR)
  • Sealing
  • Spin-on hardmask

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