Characterisation of JSR's spin-on hardmask FF-02

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Abstract

Some of the spin-on interlayer dielectrics (ILD) with dielectric constant k below 2.3, targeted for the 65 nm node and below, are available with their spin-on hard masks (SoHM) to reduce the total effective capacitance and to provide high selectivity to their respective ILDs during integration. In this work, FF-02, JSR's SoHM is characterised. Its thermal stability, chemical compatibility to stripping solutions and resistance to moisture are investigated. Methods to seal the surface of FF-02 to chemicals are explored. Electrical properties including the dielectric constant, leakage current and breakdown fields are evaluated in planar capacitors and in single damascene structures. © 2003 Elsevier B.V. All rights reserved.

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Das, A., Le, Q. T., Furukawa, Y., Nguyen, V. H., Terzieva, V., De Theije, F., … Maex, K. (2003). Characterisation of JSR’s spin-on hardmask FF-02. In Microelectronic Engineering (Vol. 70, pp. 308–313). https://doi.org/10.1016/S0167-9317(03)00367-8

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