Large-grain polysilicon on insulator films, formed by utilizing metal induced unilateral crystallization (MIUC) of amorphous silicon film and subsequent high temperature annealing, has been used to fabricate high performance MOSFETs. The corelation between the improvement of device characteristics and of grain size enhancement has been studied. It was found that the MOSFET characteristics have a strong dependence on both device width and length. Substantially better characteristics of devices fabricated on the enhanced films compared with other recrystallization methods are observed in large devices. Significant improvement in device characteristics has been demonstrated as the dimension is reduced. The statistical variation on device parameters has also been studied and the most significant device-to-device variation is found when the transistor size is around the size of the silicon grains. © 2001 Elsevier Science Ltd.
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