A hopping conduction mechanism is proposed for the mobile ions in evaporated silicon oxide films. The Cole-Cole diagram, calculated numerically, is identical to that of a simple Debye relaxation mechanism. The hopping conduction mechanism can also be combined with surface trapping, which gives rise to Cole-Cole diagrams similar to those found experimentally. Lastly it is shown that the hopping conduction model is closely related to a drift-diffusion mechanism, which has also been used to describe ion transport phenomena in thin insulating films. © 1977.
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