Comparative studies of EFG poly-Si grown by different procedures

  • Pivac B
  • Borjanovi V
  • Kovacevi I
 et al. 
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Abstract

The impurity content in EFG polycrystalline silicon materials grown by different procedures from graphite and quartz crucible has been extensively studied using Fourier transform IR technique. It is shown that the oxygen content in the material is much more dependent on the growth atmosphere at meniscus than on the type of crucible. In all samples the carbon content remains supersaturated up to very high temperatures of annealing, not affected by the oxygen presence. © 2002 Elsevier Science B.V. All rights reserved.

Author-supplied keywords

  • Carbon
  • Deep levels
  • Defects
  • Edge-defined film-fed growth
  • Oxygen
  • Polycrystalline silicon

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