Comparison of resonant tunneling currents in double gate MOS diodes with metal and poly-silicon gates

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Abstract

A purpose of this work is to investigate theoretically the electron resonant tunneling current through the gate-SiO2-Si-SiO2-gate system. The resonant tunneling current is calculated and analyzed in dependence on bias voltage for two kinds of the gate material: metal (aluminum) gate and n+-poly-silicon gate. © 2004 Elsevier B.V. All rights reserved.

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Majkusiak, B. (2004). Comparison of resonant tunneling currents in double gate MOS diodes with metal and poly-silicon gates. In Microelectronic Engineering (Vol. 72, pp. 96–100). https://doi.org/10.1016/j.mee.2003.12.023

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