Comparison of resonant tunneling currents in double gate MOS diodes with metal and poly-silicon gates

  • Majkusiak B
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Abstract

A purpose of this work is to investigate theoretically the electron resonant tunneling current through the gate-SiO2-Si-SiO2-gate system. The resonant tunneling current is calculated and analyzed in dependence on bias voltage for two kinds of the gate material: metal (aluminum) gate and n+-poly-silicon gate. © 2004 Elsevier B.V. All rights reserved.

Author-supplied keywords

  • MOS devices
  • Resonant tunneling
  • SOI devices
  • Silicon devices
  • Tunneling

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Authors

  • Bogdan Majkusiak

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