AES, LEED and scanning electron microscopy analysis performed on the Pb/Ge(111) system under UHV lead to the following main results. The Pb/Ge(111) system exhibits the Stranski-Krastanov growth mode. The stoichiometry of the complete 2D layer is one. This monolayer undergoes a reversible phase transformation √3 × √3 ⇄ 1 × 1 at around 300°C. The value of the bonding energy of one lead atom on (111)Ge is found to be equal to φPb-Ge = 31 ± 2 kcal mol. The adhesion energy of a 3D lead crystallite on (111)Ge has been estimated to be β = 918 ± 9 erg cm2. © 1983.
Métois, J. J., & Le Lay, G. (1983). Complementary data obtained on the metal-semiconductor interface by LEED, AES and SEM: Pb/Ge(111). Surface Science, 133(2–3), 422–442. https://doi.org/10.1016/0039-6028(83)90011-0