Complementary data obtained on the metal-semiconductor interface by LEED, AES and SEM: Pb/Ge(111)

  • Métois J
  • Le Lay G
  • 2

    Readers

    Mendeley users who have this article in their library.
  • 71

    Citations

    Citations of this article.

Abstract

AES, LEED and scanning electron microscopy analysis performed on the Pb/Ge(111) system under UHV lead to the following main results. The Pb/Ge(111) system exhibits the Stranski-Krastanov growth mode. The stoichiometry of the complete 2D layer is one. This monolayer undergoes a reversible phase transformation √3 × √3 ⇄ 1 × 1 at around 300°C. The value of the bonding energy of one lead atom on (111)Ge is found to be equal to φPb-Ge= 31 ± 2 kcal mol. The adhesion energy of a 3D lead crystallite on (111)Ge has been estimated to be β = 918 ± 9 erg cm2. © 1983.

Get free article suggestions today

Mendeley saves you time finding and organizing research

Sign up here
Already have an account ?Sign in

Find this document

Authors

  • J. J. Métois

  • G. Le Lay

Cite this document

Choose a citation style from the tabs below

Save time finding and organizing research with Mendeley

Sign up for free