Complementary data obtained on the metal-semiconductor interface by LEED, AES and SEM: Pb/Ge(111)

72Citations
Citations of this article
4Readers
Mendeley users who have this article in their library.
Get full text

Abstract

AES, LEED and scanning electron microscopy analysis performed on the Pb/Ge(111) system under UHV lead to the following main results. The Pb/Ge(111) system exhibits the Stranski-Krastanov growth mode. The stoichiometry of the complete 2D layer is one. This monolayer undergoes a reversible phase transformation √3 × √3 ⇄ 1 × 1 at around 300°C. The value of the bonding energy of one lead atom on (111)Ge is found to be equal to φPb-Ge = 31 ± 2 kcal mol. The adhesion energy of a 3D lead crystallite on (111)Ge has been estimated to be β = 918 ± 9 erg cm2. © 1983.

Cite

CITATION STYLE

APA

Métois, J. J., & Le Lay, G. (1983). Complementary data obtained on the metal-semiconductor interface by LEED, AES and SEM: Pb/Ge(111). Surface Science, 133(2–3), 422–442. https://doi.org/10.1016/0039-6028(83)90011-0

Register to see more suggestions

Mendeley helps you to discover research relevant for your work.

Already have an account?

Save time finding and organizing research with Mendeley

Sign up for free