Complex micro-patterning in silicon with varied tilt angles realized by advanced plasma etching

  • Richter K
  • Fischer D
  • Schmidt D
 et al. 
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The objective of our investigations was to develop a new etching process, which accomplished well defined positive etch profiles in silicon. Using this so-called PPE-process (Positive Profiles Etching process) we realized patterns in silicon with tilt angles of the sidewalls between 60 and 88° and an etch depth up to 200 μm. Etch rates between 3 and 5 μm/min can be achieved and a large number of process parameters enables the variation of the etch profiles in a wide range. Based on these results we could create complex etch profiles by a combination of several silicon etching processes according to application-oriented demands. © 2003 Elsevier Science B.V. All rights reserved.

Author-supplied keywords

  • Advanced Silicon Etch process
  • Positive Profiles Etching process
  • Silicon micro-patterning

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  • K. Richter

  • D. Fischer

  • D. Schmidt

  • J. W. Bartha

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