The influence of the synthesis temperature on the composition, structure and physico-chemical properties of silicon nitride films, produced from dichlorosilane and ammonia at low pressure is investigated. It is found that films, grown in the temperature range 750-840°C, are amorphous, close to the stoichiometric ones, and are homogeneous in composition and properties. Increasing the deposition temperature results in a decrease of the etching and oxidation rates. These relationships become saturated in the temperature range 800-850°C. The films have good dielectric properties. © 1992.
Zambov, L., Peev, G., Shanov, V., & Drumeva, S. (1992). Composition, structure and properties of silicon nitride films grown from dichlorosilane and ammonia at low pressure. Vacuum, 43(3), 227–230. https://doi.org/10.1016/0042-207X(92)90267-Z