Two types of silicon (Si) substrates (40 n-type with uniform base doping and 40 n/n+epitaxial wafers) from the silicon industry rejects were chosen as the starting material for low-cost concentrator solar cells. They were divided into four groups, each consisting of 20 substrates: 10 are n/n+and 10 are n substrates, and the solar cells were prepared for different diffusion times (45, 60, 75 and 90 min). The fabricated solar cells on n/n+substrates (prepared with a diffusion time of 75 min) showed better parameters. In order to improve their performances, particularly the fill factor, 20 new solar cells on n/n+substrates were fabricated using the same procedure (the diffusion time was 75 min) - but with four new front contact patterns. Investigation of current-voltage (I-V) characteristics under AM 1.5 showed that the parameters of these 20 new solar cells have improved in comparison to previous solar cells' parameters, and were as follows: open-circuit voltage (VOC=0.57 V); short circuit current (ISC= 910 mA), and efficiency (η = 9.1%). Their fill factor has increased about 33%. The I-V characteristics of these solar cells were also investigated under different concentration ratios (X), and they exhibited the following parameters (under X= 100 suns): VOC= 0.62 V and ISC= 36 A. © 2004 Elsevier Ltd. All rights reserved. Monocrystalline substrates; n/n+.
Al-Soud, M. S., & Hrayshat, E. S. (2005). Concentrator silicon solar cells from silicon industry rejects. Renewable Energy, 30(4), 621–630. https://doi.org/10.1016/j.renene.2004.07.001