Cu contact on NiSi/Si with thin Ru/TaN barrier

  • Zhao Y
  • Zhou M
  • Ru G
 et al. 
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Abstract

Thin Ru(5 nm)/TaN(15 nm) bi-layer was sputtered on the NiSi/Si substrate as a diffusion barrier in the copper contact structure. The barrier properties were investigated through X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM), energy dispersive X-ray (EDX) and electrical measurement. The whole Cu/Ru/TaN/NiSi/Si structure has a good thermal stability until after annealing at 450 °C. The Schottky barrier measurement shows that the leakage current increases after 450 °C annealing and after 500 °C annealing the barrier fails. Failure mechanism of the barrier stack is discussed. © 2010 Elsevier B.V. All rights reserved.

Author-supplied keywords

  • Cu contact
  • Diffusion barrier
  • Interconnects
  • TaN

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Authors

  • Ying Zhao

  • Mi Zhou

  • Guo Ping Ru

  • Yu Long Jiang

  • Xin Ping Qu

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