Thin Ru(5 nm)/TaN(15 nm) bi-layer was sputtered on the NiSi/Si substrate as a diffusion barrier in the copper contact structure. The barrier properties were investigated through X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM), energy dispersive X-ray (EDX) and electrical measurement. The whole Cu/Ru/TaN/NiSi/Si structure has a good thermal stability until after annealing at 450 °C. The Schottky barrier measurement shows that the leakage current increases after 450 °C annealing and after 500 °C annealing the barrier fails. Failure mechanism of the barrier stack is discussed. © 2010 Elsevier B.V. All rights reserved.
Zhao, Y., Zhou, M., Ru, G. P., Jiang, Y. L., & Qu, X. P. (2011). Cu contact on NiSi/Si with thin Ru/TaN barrier. In Microelectronic Engineering (Vol. 88, pp. 545–547). https://doi.org/10.1016/j.mee.2010.06.035