Trapping of 4 keV3He and 8 keV D in polycrystalline Mo at 160 K has been investigated up to saturation fluences using the3He (d, p)4He reaction. At saturation the ratio of3He atoms toMo atoms is nHe/nMo≅ 0.5, whereas for D this ratio is a factor of 3 higher. In saturated mixed implants the weighted sum concentration nD+ 3nHeis almost constant. The replacement of3He by D and of D by3He in saturated samples varies with replacement fluence. Initially 1.3 D atoms are replaced per3He ion and 0.153He atoms are replaced per D ion respectively. These values are about a factor of 2 smaller than would be expected from the ratio of the saturation concentrations, if trapping at equal sites and ideal mixing is assumed. For high fluences the replacement is influenced by small differences in the depth distributions of D and3He and by sputtering. © 1980.
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