Different optical conductivity enhancement (OCE) protocols to eliminate charging during ultra low energy SIMS profiling of semiconductor and semi-insulating materials

  • Morris R
  • Dowsett M
  • Chang R
  • 4

    Readers

    Mendeley users who have this article in their library.
  • 10

    Citations

    Citations of this article.

Abstract

This work shows how the surface potential instabilities observed during uleSIMS profiling of various semiconductor and semi-insulating materials can be overcome by using coincident bombardment with laser light to excite electron-hole pairs. We show that the causes of the problem differ according to the material system, and may sometimes be due to the material alone, or to the interaction between the material and the primary ion beam. In some cases (e.g. Si1-xGex, phosphorus implanted silicon) it is sufficient to irradiate the SIMS crater with a photon flux density above some threshold determined by the primary ion current. In others, the laser irradiation pattern must be tailored so as to create a conducting path from the crater to the sample holder. © 2006 Elsevier B.V. All rights reserved.

Author-supplied keywords

  • Charge compensation
  • Semi-insulators
  • Semiconductors
  • Ultra low energy SIMS

Get free article suggestions today

Mendeley saves you time finding and organizing research

Sign up here
Already have an account ?Sign in

Find this document

Authors

  • R. J H Morris

  • M. G. Dowsett

  • R. J H Chang

Cite this document

Choose a citation style from the tabs below

Save time finding and organizing research with Mendeley

Sign up for free