A novel phase has been discovered by dual low-energy ion implantation and high vacuum electron beam annealing. (100) p-type Si was implanted with (a) 20 keV12C+ions to the fluence of 6 × 1016cm-2and (b) 7 keV Pb+ions to the fluence of 4 × 1015cm-2. The12C ion implantation results in an understoichiometric shallow SiCxlayer that intersects with the surface. The implanted Pb ions decorate a shallow subsurface region. High vacuum electron beam annealing at 1000 °C for 15 s using a temperature gradient of 5 °C s-1leads to the formation of large SiC nanocrystals on the surface with RBS measurements showing Pb has diffused into the deeper region affected by the12C implantation. In this region, a new crystalline phase has been discovered by XRD measurements. © 2008 Elsevier Ltd. All rights reserved.
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