In order to clarify the dissolution in the Earth's gravitational field, we examined the dissolution of silicon in an indium solution using a horizontal substrate-solution-substrate "sandwich" system under isothermal conditions. A remarkable difference was observed between upper and lower substrates. We will discuss the effect of the surface reaction and the solutal convection on the dissolution and the flatness of the substrate surface. A numerical description of the dissolution process is given. Calculated results show that the pbserved phenomena can be explained on the basis of the solutal convection model with consideration of the surface reaction. © 1991.
Kimura, M., Tanaka, A., & Sukegawa, T. (1991). Dissolution process of silicon in an indium solution. Applied Surface Science, 48–49(C), 185–189. https://doi.org/10.1016/0169-4332(91)90328-H