Effect of annealing temperature of Ga2O3/V films on synthesizing β - Ga2O3nanorods

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β-Ga2O3nanostructured materials have been obtained on Si(111) substrates by annealing the Ga2O3/V films at different temperatures. X-ray diffraction (XRD), scanning electron microscope (SEM), high-resolution transmission electron microscope (HRTEM) and photoluminescence (PL) spectrum were used to analyze the structure, morphology and optical properties of β-Ga2O3nanostructured films. These properties were investigated particularly as a function of annealing temperature. Our results indicate that the β-Ga2O3nanorods annealed at 950 {ring operator}C have the best morphology and crystallinity. These nanorods are pure monoclinic Ga2O3structures with lengths of about 5 μm and diameters of about 180 nm, which is conducive to the application of nanodevices. Finally, the growth mechanism is also discussed briefly. © 2008 Elsevier Ltd. All rights reserved.




Yang, Z., Xue, C., Zhuang, H., Wang, G., Chen, J., Li, H., … Huang, Y. (2008). Effect of annealing temperature of Ga2O3/V films on synthesizing β - Ga2O3nanorods. Solid State Communications, 148(9–10), 480–483. https://doi.org/10.1016/j.ssc.2008.04.017

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