Effect of annealing temperature of Ga2O3/V films on synthesizing β - Ga2O3nanorods

  • Yang Z
  • Xue C
  • Zhuang H
 et al. 
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Abstract

β-Ga2O3nanostructured materials have been obtained on Si(111) substrates by annealing the Ga2O3/V films at different temperatures. X-ray diffraction (XRD), scanning electron microscope (SEM), high-resolution transmission electron microscope (HRTEM) and photoluminescence (PL) spectrum were used to analyze the structure, morphology and optical properties of β-Ga2O3nanostructured films. These properties were investigated particularly as a function of annealing temperature. Our results indicate that the β-Ga2O3nanorods annealed at 950 {ring operator}C have the best morphology and crystallinity. These nanorods are pure monoclinic Ga2O3structures with lengths of about 5 μm and diameters of about 180 nm, which is conducive to the application of nanodevices. Finally, the growth mechanism is also discussed briefly. © 2008 Elsevier Ltd. All rights reserved.

Author-supplied keywords

  • A. Gallium
  • A. Nanorods
  • B. Crystal growth
  • D. Optical properties

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Authors

  • Zhaozhu Yang

  • Chengshan Xue

  • Huizhao Zhuang

  • Gongtang Wang

  • Jinhua Chen

  • Hong Li

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