The effect of arsenic thermal diffusion on the morphology and photoluminescence properties of sub-micron ZnO rods

  • Ding M
  • Yao B
  • Zhao D
 et al. 
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Abstract

As-doped sub-micron ZnO rods were realized by a simple thermal diffusion process using a GaAs wafer as an arsenic resource. The surface of the sub-micron ZnO rods became rough and the morphology of As-doped sub-micron ZnO rods changed markedly with increasing diffusion temperature. From the results of energy-dispersive X-ray spectroscopy, X-ray diffraction and photoluminescence, arsenic elements were confirmed to be introduced into the sub-micron ZnO rods. The acceptor ionization energy was deduced to be about 110 meV based on the temperature-dependent PL spectra. © 2010.

Author-supplied keywords

  • Nanostructures
  • Photoluminescence
  • Scanning electron microscopy
  • Thermal diffusion
  • X-ray diffraction
  • Zinc oxide

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Authors

  • Meng Ding

  • Dongxu Zhao

  • Fang Fang

  • Dezhen Shen

  • Zhenzhong Zhang

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