As-doped sub-micron ZnO rods were realized by a simple thermal diffusion process using a GaAs wafer as an arsenic resource. The surface of the sub-micron ZnO rods became rough and the morphology of As-doped sub-micron ZnO rods changed markedly with increasing diffusion temperature. From the results of energy-dispersive X-ray spectroscopy, X-ray diffraction and photoluminescence, arsenic elements were confirmed to be introduced into the sub-micron ZnO rods. The acceptor ionization energy was deduced to be about 110 meV based on the temperature-dependent PL spectra. © 2010.
Ding, M., Yao, B., Zhao, D., Fang, F., Shen, D., & Zhang, Z. (2010). The effect of arsenic thermal diffusion on the morphology and photoluminescence properties of sub-micron ZnO rods. Thin Solid Films, 518(15), 4390–4393. https://doi.org/10.1016/j.tsf.2010.02.009