Creep tests were conducted on copper crystals containing dispersions of SiO//2 or Al//2O//3 produced by internal oxidation. A comparison was made between well-annealed crystals with a dislocation density rho of 4 multiplied by 10**1**0 m** minus **2 and sewaged-and-annealed crystals with a dislocation density rho of about 10**1**4 m** minus **2; the changes in dislocation distribution were followed by transmission electron microscopy. The well-annealed crystals exhibited a creep limit which corresponded to the tensile yield stress, although no such limit was observed in the crystals containing a dislocation substructure. The steady state creep rate data are discussed in terms of two empirical equations given in the paper. It is concluded that the main effect of the dispersed phase is to retard the rate of recovery in the glide-recovery sequence.
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