The growth of hexagonal wurzite one dimensional (1D) gallium nitride (GaN) nanostructures on sapphire substrates using hydride vapor phase epitaxy (HVPE) process was carried out at two different temperatures (973 K and 1023 K). The GaN nanoneedles were formed at 973 K and hexagonal nanorods get formed at 1023 K. The morphologies of these nanostructures were studied using high resolution scanning electron microscope. X-ray diffraction and micro-Raman spectroscopy measurements confirmed that the as grown GaN nanostructures are of hexagonal wurtzite structure without any oxide phase. The emission properties of these nanostructures have been investigated using photoluminescence. © 2012 Elsevier B.V. All rights reserved.
Munawar Basha, S., Ryu, S. R., Kang, T. W., Srivastava, O. N., Ramakrishnan, V., & Kumar, J. (2012). Effect of growth temperature on gallium nitride nanostructures using HVPE technique. Physica E: Low-Dimensional Systems and Nanostructures, 44(9), 1885–1888. https://doi.org/10.1016/j.physe.2012.05.014