Effect of growth temperature on gallium nitride nanostructures using HVPE technique

  • Munawar Basha S
  • Ryu S
  • Kang T
 et al. 
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The growth of hexagonal wurzite one dimensional (1D) gallium nitride (GaN) nanostructures on sapphire substrates using hydride vapor phase epitaxy (HVPE) process was carried out at two different temperatures (973 K and 1023 K). The GaN nanoneedles were formed at 973 K and hexagonal nanorods get formed at 1023 K. The morphologies of these nanostructures were studied using high resolution scanning electron microscope. X-ray diffraction and micro-Raman spectroscopy measurements confirmed that the as grown GaN nanostructures are of hexagonal wurtzite structure without any oxide phase. The emission properties of these nanostructures have been investigated using photoluminescence. © 2012 Elsevier B.V. All rights reserved.

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  • S. Munawar Basha

  • S. R. Ryu

  • T. W. Kang

  • O. N. Srivastava

  • V. Ramakrishnan

  • J. Kumar

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