Effect of heating on the structure of Au/GaAs encapsulated with SiO2

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Abstract

The structural effects of heating 1500 Å Au/GaAs (001) encapsulated with 2000 Å of SiO2were examined by scanning electron microscopy and X-ray diffraction. It was observed that SiO2/Au/GaAs (capped) in vacuum up to 500°C remained shiny and gold in color, whereas similar heating of Au/GaAs (uncapped) caused a change of color from shiny gold to dull silver. Furthermore, mass spectroscopy showed that the amount of arsenic vapor evolved was much less for the capped sample. However, X-ray diffraction showed that Au7Ga2formed abundantly in both types of samples after heating at 500°C, though the epitaxial relationship was mainly Au7Ga2(001) {norm of matrix} GaAs (001) for capped and Au7Ga2(100) {norm of matrix} GaAs (001) for uncapped. SEM revealed gold-rich aligned rectangular protrusions on the surfaces of SiO2/Au/GaAs as well as Au/GaAs after heating at 500°C, though the average length of these rectangles was 1.5 μm for the capped sample and 6.7 μm for the uncapped sample. Moreover, new morphological features absent in Au/GaAs were observed in SiO2/Au/GaAs. These features are a gold-rich maze with a line width of μm and gold-rich protruded lines with a line width of 9 μm. The gold-rich protruded lines were formed by the growth and joining together of some gold-rich aligned rectangular protrusions. The gold-rich maze was observed in SiO2/Au/GaAs after heating in vacuum, but was not observed in SiO2/Au/GaAs after heating in nitrogen. © 1987.

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Zeng, X. F., Chung, D. D. L., & Lakhani, A. (1987). Effect of heating on the structure of Au/GaAs encapsulated with SiO2. Solid State Electronics, 30(12), 1259–1266. https://doi.org/10.1016/0038-1101(87)90049-9

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