This paper reports the effect of Ag-doping on electrical properties of a-Sb2Se3in the temperature range 230-340 K and frequency range 5-100 kHz. The variation of transport properties with thermal doping has been studied. Ag-doping produces two homogeneous phases in the sample, which are found to be voltage dependent in the temperature range studied and frequency dependent in lower frequency region (0.1-10 kHz). Activation energy Egand C′ [= σ0exp (γ/k), where γ, is the temperature coefficient of the band gap] calculated from dc conductivity has been found to vary from (0.42 ± 0.01) eV to (0.26 ± 0.01) eV and (4.11 ± 0.01) × 10-5to (2.90 ± 0.02) × 10-6Ω-1cm-1respectively. Ag-doping can be used to make the sample useful in device applications. © 2007 Elsevier B.V. All rights reserved.
Mendeley saves you time finding and organizing research
Choose a citation style from the tabs below