Effects of inhomogeneities and ordering in InGaP/GaAs system grown by MOVPE

8Citations
Citations of this article
9Readers
Mendeley users who have this article in their library.
Get full text

Abstract

Because of the growing interest toward the InGaP/GaAs heterostructure and its related Al-free devices development, the difficulties in obtaining the best electronic properties have to be well known. Here, structural, optical and electrical investigations of InxGa1-x layers grown with different MOVPE machines have been employed to give evidence that uniformity of the crystalline quality, morphology, optical and transport properties are strongly affected by (i) lattice matching, (ii) gas phase fluid-dynamics, (iii) superlattice ordering.

Cite

CITATION STYLE

APA

Attolini, G., Bocchi, C., Germini, F., Pelosi, C., Parisini, A., Tarricone, L., … Hasenohrl, S. (2000). Effects of inhomogeneities and ordering in InGaP/GaAs system grown by MOVPE. Materials Chemistry and Physics, 66(2), 246–252. https://doi.org/10.1016/S0254-0584(00)00319-9

Register to see more suggestions

Mendeley helps you to discover research relevant for your work.

Already have an account?

Save time finding and organizing research with Mendeley

Sign up for free