Because of the growing interest toward the InGaP/GaAs heterostructure and its related Al-free devices development, the difficulties in obtaining the best electronic properties have to be well known. Here, structural, optical and electrical investigations of InxGa1-x layers grown with different MOVPE machines have been employed to give evidence that uniformity of the crystalline quality, morphology, optical and transport properties are strongly affected by (i) lattice matching, (ii) gas phase fluid-dynamics, (iii) superlattice ordering.
Attolini, G., Bocchi, C., Germini, F., Pelosi, C., Parisini, A., Tarricone, L., … Hasenohrl, S. (2000). Effects of inhomogeneities and ordering in InGaP/GaAs system grown by MOVPE. Materials Chemistry and Physics, 66(2), 246–252. https://doi.org/10.1016/S0254-0584(00)00319-9