Effects of rapid thermal annealing on self-assembled InGaAs/GaAs quantum dots superlattice

  • Zhuang Q
  • Li J
  • Wang X
 et al. 
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Abstract

Postgrowth rapid thermal annealing was used to study the relaxation mechanism and optical properties of InGaAs/GaAs self-assembled quantum dots superlattice grown by molecular beam epitaxy. It is found that a significant narrowing of the luminescence linewidth (from 80 to 42 meV) occurs together with about 86 meV blue shift at annealing temperature up to 950 °C. Double crystal X-ray diffraction measurements show that the intensity of the satellite diffraction peak, which corresponds to the quantum dots superlattice, decreased with the increasing annealing temperature and disappeared at 750 °C, but recovered and increased again at higher annealing temperatures. This behavior can be explained by two competing relaxation mechanisms; interdiffusion and favored migration. The study indicates that a suitable annealing treatment can improve the structural properties of the quantum dots superlattice.

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Authors

  • Q.D. Zhuang

  • J.M. Li

  • X.X. Wang

  • Y.P. Zeng

  • Y.T. Wang

  • B.Q. Wang

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