Electroluminescence properties of SiOx layers implanted with rare earth ions

  • Irrera A
  • Miritello M
  • Pacifici D
 et al. 
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Abstract

In this work we have studied the structural, electrical and optical properties of MOS devices, where the dielectric layer consists of a SiOx(x < 2) thin film prepared by plasma enhanced chemical vapor deposition and implanted with rare earth ions. As deposited SiOxfilms were annealed at high temperature (>1000 °C) to induce the separation of the Si and SiO2phases with the formation of Si nanocrystals embedded in the insulating matrix. Devices based on this system present a strong light emission at room temperature at a wavelength of about 900 nm. Devices emitting at different wavelengths have been fabricated by implanting SiOxfilms with Er or Tm. Devices based on Er-doped Si nanoclusters film exhibit an intense 1.54 μm room temperature electroluminescence (EL). We have calculated the excitation cross-section for Er ions in presence of Si nanoclusters under electrical pumping and the value is ∼1 × 10-14cm2, comparable to the value found for the electrical excitation of undoped Si nanocrystals. Finally, devices based on Tm-doped Si nanoclusters exhibit two EL peaks at 0.78 and 1.7 μm. © 2003 Elsevier B.V. All rights reserved.

Author-supplied keywords

  • Electroluminescence
  • Optoelectronic devices
  • Rare earth
  • Si nanocrystals

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Authors

  • A. Irrera

  • M. Miritello

  • D. Pacifici

  • G. Franzò

  • F. Priolo

  • F. Iacona

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