Electroluminescence properties of SiOx layers implanted with rare earth ions

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Abstract

In this work we have studied the structural, electrical and optical properties of MOS devices, where the dielectric layer consists of a SiO x (x < 2) thin film prepared by plasma enhanced chemical vapor deposition and implanted with rare earth ions. As deposited SiOx films were annealed at high temperature (>1000 °C) to induce the separation of the Si and SiO2 phases with the formation of Si nanocrystals embedded in the insulating matrix. Devices based on this system present a strong light emission at room temperature at a wavelength of about 900 nm. Devices emitting at different wavelengths have been fabricated by implanting SiOx films with Er or Tm. Devices based on Er-doped Si nanoclusters film exhibit an intense 1.54 μm room temperature electroluminescence (EL). We have calculated the excitation cross-section for Er ions in presence of Si nanoclusters under electrical pumping and the value is ∼1 × 10-14 cm2, comparable to the value found for the electrical excitation of undoped Si nanocrystals. Finally, devices based on Tm-doped Si nanoclusters exhibit two EL peaks at 0.78 and 1.7 μm. © 2003 Elsevier B.V. All rights reserved.

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Irrera, A., Miritello, M., Pacifici, D., Franzò, G., Priolo, F., Iacona, F., … Fallica, P. G. (2004). Electroluminescence properties of SiOx layers implanted with rare earth ions. In Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms (Vol. 216, pp. 222–227). https://doi.org/10.1016/j.nimb.2003.11.038

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