Electron Raman scattering in semiconductor quantum wire in external magnetic field: Fröhlich interaction

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Abstract

The differential cross-section for an electron Raman scattering process in a semiconductor quantum wire in the presence of an external magnetic field perpendicular to the plane of confinement regarding phonon-assisted transitions, is calculated. We assume single parabolic conduction band and present a description of the phonon modes of cylindrical structures embedded in another material using the Fröhlich phonon interaction. To illustrate the theory we use a GaAs/Al0.35Ga0.75As system. The emission spectra are discussed for different scattering configurations and the selection rules for the processes are also studied. The magnetic field distribution is considered constant with value B0inside of the wire, and zero outside. © 2009 Elsevier B.V. All rights reserved.

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Betancourt-Riera, R., Nieto Jalil, J. M., Betancourt-Riera, R., & Riera, R. (2009, August 1). Electron Raman scattering in semiconductor quantum wire in external magnetic field: Fröhlich interaction. Physica B: Condensed Matter. https://doi.org/10.1016/j.physb.2009.04.057

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