Electron Raman scattering in semiconductor quantum wire in external magnetic field: Fröhlich interaction

  • Betancourt-Riera R
  • Nieto Jalil J
  • Betancourt-Riera R
 et al. 
  • 3


    Mendeley users who have this article in their library.
  • 1


    Citations of this article.


The differential cross-section for an electron Raman scattering process in a semiconductor quantum wire in the presence of an external magnetic field perpendicular to the plane of confinement regarding phonon-assisted transitions, is calculated. We assume single parabolic conduction band and present a description of the phonon modes of cylindrical structures embedded in another material using the Fröhlich phonon interaction. To illustrate the theory we use a GaAs/Al0.35Ga0.75As system. The emission spectra are discussed for different scattering configurations and the selection rules for the processes are also studied. The magnetic field distribution is considered constant with value B0inside of the wire, and zero outside. © 2009 Elsevier B.V. All rights reserved.

Author-supplied keywords

  • Quantum wire
  • Raman

Get free article suggestions today

Mendeley saves you time finding and organizing research

Sign up here
Already have an account ?Sign in

Find this document


Cite this document

Choose a citation style from the tabs below

Save time finding and organizing research with Mendeley

Sign up for free