Electronic structure and defect density of states of hydrogenated amorphous carbon (a-C:H) as determined by photoelectron and photoelectron yield spectroscopy

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Abstract

Amorphous hydrogenated carbon films were prepared by RF-PECVD of CH4with the self bias varying from 0 to 200V. The films were analysed with x-ray and ultraviolet photoelectron spectroscopy as well as photoelectron yield spectroscopy. The densities as derived from the plasmon energies increase from 1.2 to 1.7 g/cm3with bias voltage and the sp2/(sp3+sp2) ratio extracted from an analysis of the valence band spectra increases from 15 to 35% over the same range. Two defect bands were identified in the pseudogap, 1.4 eV and 2.4 eV above the π-bonding states with integrated densities that increase from 1·1020to 7·1020cm-3with bias. © 1993.

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Schäfer, J., Ristein, J., & Ley, L. (1993). Electronic structure and defect density of states of hydrogenated amorphous carbon (a-C:H) as determined by photoelectron and photoelectron yield spectroscopy. Journal of Non-Crystalline Solids, 164166(PART 2), 1123–1126. https://doi.org/10.1016/0022-3093(93)91196-A

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