An empirical fringing capacitance dependent threshold voltage model for non-uniformly doped submicron MOSFETs

  • Maneesha
  • Khanna M
  • Hadlar S
 et al. 
  • 5

    Readers

    Mendeley users who have this article in their library.
  • 2

    Citations

    Citations of this article.

Abstract

A simple and closed-form expression for the threshold voltage of non-uniformly doped submicron MOSFET is developed. The main features of this model are: (1) non-equipotential surface of the device which includes the non-uniformity effect along the channel; (2) charge screening effects to explain the weak substrate bias dependence for short channel devices; and (3) total gate capacitance of MOS structures (the geometric capacitance and the fringing capacitance which is calculated using the conformal transformation considering the effects of electrode thickness and lateral gate dimensions). Comparisons between the present model and experimental data show good agreement for a wide range of channel lengths and applied substrate biases.

Get free article suggestions today

Mendeley saves you time finding and organizing research

Sign up here
Already have an account ?Sign in

Find this document

Authors

  • Maneesha

  • M. K. Khanna

  • S. Hadlar

  • R. S. Gupta

Cite this document

Choose a citation style from the tabs below

Save time finding and organizing research with Mendeley

Sign up for free