The interaction between silicon carbide surface and deuterium ions has been studied in terms of physical and chemical sputtering. Measurements of mass spectra of various sputtered ions and their energy distribution curves were performed with use of an ion microprobe analyzer (IMA). Positive and negative ion mass spectra showed that sputtered ion species were observed in the form of SiZCmDn±. Energy distribution curves showed that the most probable energy (Ep), FWHM and the exponent N in the term E-Ndecrease with increasing of mass number of the physical sputtering products. The above parameters observed for chemical sputtering products were smaller than the physical sputtering products. The processes of physical and chemical sputtering observed on the low Z compound are discussed. © 1981.
Kato, S., Satake, T., Mohri, M., & Yamashina, T. (1981). Energy analysis of secondary ion species sputtered from silicon carbide surface during deuterium ion irradiation. Journal of Nuclear Materials, 103(C), 351–355. https://doi.org/10.1016/0022-3115(82)90622-5