Epitaxial Mn-doped ZnO diluted magnetic semiconductor thin films grown by plasma-assisted molecular-beam epitaxy

  • Yang Z
  • Zuo Z
  • Zhou H
 et al. 
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Abstract

A growth window for the Mn effusion cell temperature (TMn) is demonstrated for epitaxial Mn-doped ZnO (MnZnO) thin films grown on sapphire substrates using molecular-beam epitaxy. Within the growth window, the films are ferromagnetic with the largest saturated magnetization occurring at TMn=700 °C. The Curie temperature of these MnZnO diluted magnetic semiconductor thin films is above room-temperature. The ferromagnetism is weakly anisotropic. Well-resolved near-band-edge photoluminescence emissions dominate the spectra at both low- and room-temperatures. No evident spin polarization on the carriers was detected with the magneto-photoluminescence studies. Magnetoresistance and anomalous Hall effects of the MnZnO thin films were studied. The anomalous Hall coefficient shows a quadratic dependence on the resistivity. © 2010 Elsevier B.V. All rights reserved.

Author-supplied keywords

  • A3. Molecular beam epitaxy
  • B1. Oxide
  • B2. Semiconducting IIVI materials

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Authors

  • Z. Yang

  • Z. Zuo

  • H. M. Zhou

  • W. P. Beyermann

  • J. L. Liu

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