Epitaxy of copper on muscovite mica

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Abstract

The vapour deposition of copper onto air-cleaved mica (001) has been studied by reflection high energy electron diffraction in ultrahigh vacuum. At room temperature, crystallites with random orientation and crystallites with Cu(111)mica (001) and Cu[110]mica [100] (orientation I) or Cu[110]mica [010] (orientation II) are observed. On annealing, either orientation I or orientation II dominates. Also at room temperature, good epitaxy of copper on Cu(111) occurs. Deposition at 570 K always leads to a single-crystal film in orientation I. During early growth, however, crystallites in both orientations appears to have comparable importance, but those with orientation I grow at the expense of those with orientation II during coalescence. © 1982.

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Stiddard, M. H. B. (1982). Epitaxy of copper on muscovite mica. Thin Solid Films, 94(1), 1–6. https://doi.org/10.1016/0040-6090(82)90023-2

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