The vapour deposition of copper onto air-cleaved mica (001) has been studied by reflection high energy electron diffraction in ultrahigh vacuum. At room temperature, crystallites with random orientation and crystallites with Cu(111)mica (001) and Cumica  (orientation I) or Cumica  (orientation II) are observed. On annealing, either orientation I or orientation II dominates. Also at room temperature, good epitaxy of copper on Cu(111) occurs. Deposition at 570 K always leads to a single-crystal film in orientation I. During early growth, however, crystallites in both orientations appears to have comparable importance, but those with orientation I grow at the expense of those with orientation II during coalescence. © 1982.
Stiddard, M. H. B. (1982). Epitaxy of copper on muscovite mica. Thin Solid Films, 94(1), 1–6. https://doi.org/10.1016/0040-6090(82)90023-2