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Abstract

We report on the thermal treatment effects in a γ-ray irradiated oxygen deficient amorphous silicon dioxide (a-SiO2) containing Al impurities. We observed that by thermal treatments the intensity of the 7.6 eV optical absorption band, associated to an oxygen deficient center, and the EPR signal amplitude of irradiation induced [AlO4]0centers gradually decrease. During these thermal treatments, the Eγ′centers concentration is found to increase in a correlated way to the decrease of the 7.6 eV absorption amplitude. These results are interpreted assuming an hole-transfer process from the [AlO4]0centers to the diamagnetic oxygen vacancies, resulting in the generation of Eγ′centers. Our results prove the oxygen vacancy model for the 7.6 eV optical absorption band and its precursor nature for Eγ′centers. © 2007 Elsevier B.V. All rights reserved.

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Buscarino, G., & Agnello, S. (2007). Experimental evidence of Eγ ′ centers generation from oxygen vacancies in a-SiO2. Journal of Non-Crystalline Solids, 353(5–7), 577–580. https://doi.org/10.1016/j.jnoncrysol.2006.12.031

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