Experimental results on the integration of copper and CVD ultra low k material

  • Uhlig M
  • Bertz A
  • Erben J
 et al. 
  • 2

    Readers

    Mendeley users who have this article in their library.
  • 2

    Citations

    Citations of this article.

Abstract

The integration of ultra low k materials in copper damascene architecture is one of the main issues in finding microelectronic-process-compatible dielectric materials. The aim of this paper is to show the integration conformity with common equipment and process steps using a PECVD (plasma enhanced chemical vapor deposition) CF polymer ultra low k material in a Cu single damascene architecture (Proceedings of the Advanced Metallization Conference, 2002). The intermetal dielectric low k material used in the described structures has 2.1≤k≤2.3 (k depends on deposition process parameters [Microelectron. Eng. 50 (2000) 7-14]) and the copper was deposited by a metal organic chemical vapor deposition process. After chemical mechanical polishing the structures were characterized by scanning electron microscopy and electrical measurements. © 2003 Elsevier B.V. All rights reserved.

Author-supplied keywords

  • CF Polymer
  • MOCVD copper
  • PECVD
  • Single damascene
  • Ultra low k dielectric

Get free article suggestions today

Mendeley saves you time finding and organizing research

Sign up here
Already have an account ?Sign in

Find this document

Authors

  • Matthias Uhlig

  • A. Bertz

  • J. W. Erben

  • S. E. Schulz

  • T. Gessner

  • D. Zeidler

Cite this document

Choose a citation style from the tabs below

Save time finding and organizing research with Mendeley

Sign up for free