Experimental results on the integration of copper and CVD ultra low k material

  • Uhlig M
  • Bertz A
  • Erben J
 et al. 
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The integration of ultra low k materials in copper damascene architecture is one of the main issues in finding microelectronic-process-compatible dielectric materials. The aim of this paper is to show the integration conformity with common equipment and process steps using a PECVD (plasma enhanced chemical vapor deposition) CF polymer ultra low k material in a Cu single damascene architecture (Proceedings of the Advanced Metallization Conference, 2002). The intermetal dielectric low k material used in the described structures has 2.1≤k≤2.3 (k depends on deposition process parameters [Microelectron. Eng. 50 (2000) 7-14]) and the copper was deposited by a metal organic chemical vapor deposition process. After chemical mechanical polishing the structures were characterized by scanning electron microscopy and electrical measurements. © 2003 Elsevier B.V. All rights reserved.

Author-supplied keywords

  • CF Polymer
  • MOCVD copper
  • Single damascene
  • Ultra low k dielectric

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  • Matthias Uhlig

  • A. Bertz

  • J. W. Erben

  • S. E. Schulz

  • T. Gessner

  • D. Zeidler

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