The integration of ultra low k materials in copper damascene architecture is one of the main issues in finding microelectronic-process-compatible dielectric materials. The aim of this paper is to show the integration conformity with common equipment and process steps using a PECVD (plasma enhanced chemical vapor deposition) CF polymer ultra low k material in a Cu single damascene architecture (Proceedings of the Advanced Metallization Conference, 2002). The intermetal dielectric low k material used in the described structures has 2.1≤k≤2.3 (k depends on deposition process parameters [Microelectron. Eng. 50 (2000) 7-14]) and the copper was deposited by a metal organic chemical vapor deposition process. After chemical mechanical polishing the structures were characterized by scanning electron microscopy and electrical measurements. © 2003 Elsevier B.V. All rights reserved.
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