GdBa2Cu3Oy(GdBCO) films were fabricated on pulsed laser deposition (PLD)-CeO2/ion-beam-assisted deposition (IBAD)-Gd2Zr2O7/Hastelloy C276 metal substrate tapes using the continuous in-plume PLD method. The control of the target composition is important to improve the critical current density (Jc) property, especially in the case of a short target-substrate distance. As a result, the critical current (Ic) value of 320 A/cm-W and the Jcvalue of 3.2 MA/cm2were obtained by using the target composition of Gd:Ba:Cu = 1:2:3.4 (GdBa2Cu3.4Oy) in a short sample. It was also found that a high growth rate for the GdBCO film could be realized by crystal growth in the plume (in-plume) for the target. A twice higher growth rate was achieved by the in-plume PLD technique comparing with that in the conventional condition in which crystal growth takes place near the plume edge. In addition, in order to improve the Icvalues in the external magnetic fields, we introduced the artificial pinning centers using a 5 mol%BaZrO3doped GdBa2Cu3.4Oytarget by the in-plume method. The BaZrO3nanorods were effectively introduced by in-plume PLD and the obtained sample showed improved Ic-B-θ properties due to enhanced B||c; the minimum Icvalue of 25.6 A/cm-W at 3 T in the 1.6 μm thick film. © 2009 Elsevier B.V. All rights reserved.
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