Fabrication of high-performance 407 nm violet light-emitting diode

  • Wang H
  • Jiang N
  • Hiraki H
 et al. 
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Abstract

High-performance 407nm violet InGaN multi-quantum-wells light-emitting diodes (LED) with an un-doped GaN current spreading layer were fabricated on sapphire substrate by using metal organic chemical vapor deposition technique. Different conditions were chosen to grow un-doped GaN layer as the current spreading layer in three LEDs. Using a 30nm high-temperature un-doped GaN layer, the output efficiency and high injection current luminance versus current (I-L) characteristics of our LED have been greatly improved. A LED with an output power of 7mW at an injection current of 20mA was achieved. In additional, the LED also shows an almost linear I-L characteristics at high injection current. © 2004 Elsevier B.V. All rights reserved.

Author-supplied keywords

  • A1. Characterization
  • A3. Metalorganic chemical vapor deposition
  • B1. GaN
  • B3. Light emitting diodes

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Authors

  • H. X. Wang

  • N. Jiang

  • H. Hiraki

  • K. Nishimura

  • H. Sasaoka

  • A. Hiraki

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