High-performance 407nm violet InGaN multi-quantum-wells light-emitting diodes (LED) with an un-doped GaN current spreading layer were fabricated on sapphire substrate by using metal organic chemical vapor deposition technique. Different conditions were chosen to grow un-doped GaN layer as the current spreading layer in three LEDs. Using a 30nm high-temperature un-doped GaN layer, the output efficiency and high injection current luminance versus current (I-L) characteristics of our LED have been greatly improved. A LED with an output power of 7mW at an injection current of 20mA was achieved. In additional, the LED also shows an almost linear I-L characteristics at high injection current. © 2004 Elsevier B.V. All rights reserved.
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