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Abstract

High-performance 407nm violet InGaN multi-quantum-wells light-emitting diodes (LED) with an un-doped GaN current spreading layer were fabricated on sapphire substrate by using metal organic chemical vapor deposition technique. Different conditions were chosen to grow un-doped GaN layer as the current spreading layer in three LEDs. Using a 30nm high-temperature un-doped GaN layer, the output efficiency and high injection current luminance versus current (I-L) characteristics of our LED have been greatly improved. A LED with an output power of 7mW at an injection current of 20mA was achieved. In additional, the LED also shows an almost linear I-L characteristics at high injection current. © 2004 Elsevier B.V. All rights reserved.

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Wang, H. X., Jiang, N., Hiraki, H., Nishimura, K., Sasaoka, H., Hiraki, A., & Sakai, S. (2004). Fabrication of high-performance 407 nm violet light-emitting diode. Journal of Crystal Growth, 270(1–2), 57–61. https://doi.org/10.1016/j.jcrysgro.2004.06.016

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