Fabrication and photoluminescence of GaN nanorods by ammoniating Ga2 O3 films deposited on Co-coated Si(1 1 1) substrates

  • Qin L
  • Xue C
  • Duan Y
 et al. 
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Abstract

GaN nanorods were synthesized in mass by ammoniating Ga2O3films sputtered on Si(1 1 1) substrates using cobalt as a catalyst. X-ray diffraction, scanning electron microscope, high-resolution transmission electron microscopy, X-ray photoelectron spectroscopy and photoluminescence were used to characterize the products. The results show the as-synthesized samples are of single-crystalline hexagonal wurtzite structure with the space group of P 63mc. The nanorods are straight and have a smooth surface with diameters around 200 nm and lengths up to tens of microns. The catalytic growth mechanism of GaN nanorods was also discussed. Crown Copyright © 2008.

Author-supplied keywords

  • Magnetron sputtering
  • Nanorods
  • Photoluminescence

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Authors

  • Lixia Qin

  • Chengshan Xue

  • Yifeng Duan

  • Liwei Shi

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