Fabrication and photoluminescence of GaN nanorods by ammoniating Ga2 O3 films deposited on Co-coated Si(1 1 1) substrates

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Abstract

GaN nanorods were synthesized in mass by ammoniating Ga2O3films sputtered on Si(1 1 1) substrates using cobalt as a catalyst. X-ray diffraction, scanning electron microscope, high-resolution transmission electron microscopy, X-ray photoelectron spectroscopy and photoluminescence were used to characterize the products. The results show the as-synthesized samples are of single-crystalline hexagonal wurtzite structure with the space group of P 63mc. The nanorods are straight and have a smooth surface with diameters around 200 nm and lengths up to tens of microns. The catalytic growth mechanism of GaN nanorods was also discussed. Crown Copyright © 2008.

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Qin, L., Xue, C., Duan, Y., & Shi, L. (2009). Fabrication and photoluminescence of GaN nanorods by ammoniating Ga2 O3 films deposited on Co-coated Si(1 1 1) substrates. Physica B: Condensed Matter, 404(2), 190–193. https://doi.org/10.1016/j.physb.2008.10.023

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