Finite metal-sheet-resistance in contact resistivity measurements: Application to Si/TiN contacts

  • Finetti M
  • Suni I
  • Nicolet M
  • 4

    Readers

    Mendeley users who have this article in their library.
  • 11

    Citations

    Citations of this article.

Abstract

The standard transmission line model cannot be applied to evaluate the contact resistivity of thin TiN layers on highly doped p+and n+substrates because the finite sheet resistance of the TiN must be accounted for. We present two ways to include this effect using existing analytical models. The results are shown to agree with measurements where the effect of the finite sheet resistance of TiN is eliminated with a metallic overlayer. With the help of these evaluation techniques, it is shown that the contact resistivity of TiN changes in opposite ways for p+and n+Si after vacuum annealing at 600°C for 15 min. This result is consistent with an increase of the barrier height φBnof the contact by ≅0.1 V to near midgap value. © 1983.

Get free article suggestions today

Mendeley saves you time finding and organizing research

Sign up here
Already have an account ?Sign in

Find this document

Authors

  • M. Finetti

  • I. Suni

  • M. A. Nicolet

Cite this document

Choose a citation style from the tabs below

Save time finding and organizing research with Mendeley

Sign up for free