Fluorescence EXAFS analysis of ErP grown on InP by organometallic vapor phase epitaxy using a new organometal Er(EtCp)3

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Abstract

We have investigated local structures of ErP grown by organometallic vapor phase epitaxy Er source: tris(ethylcyclopentadienyl)erbium (Er(EtCp)3by extended X-ray absorption fine structure (EXAFS) measurement. The EXAFS analysis revealed that NaCl-type ErP and Er-O(-C) compounds coexisted in the case of ErP growth by using Er(EtCp)3. The NaCl-type ErP was preferentially formed on InP(111)A compared with InP(001) and InP(111)B. It is considered that formation of unexpected Er-O(-C) compounds is due to low but significant concentration of residual O and/or C in Er(EtCp)3. © 2003 Elsevier Ltd. All rights reserved.

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Ofuchi, H., Akane, T., Jinno, S., Kuno, T., Hirata, T., Tabuchi, M., … Nakamura, A. (2003). Fluorescence EXAFS analysis of ErP grown on InP by organometallic vapor phase epitaxy using a new organometal Er(EtCp)3. In Materials Science in Semiconductor Processing (Vol. 6, pp. 469–472). https://doi.org/10.1016/j.mssp.2003.08.004

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