Formation of β-SiC nanocrystals on Si(1 1 1) monocrystal during the HFCVD of diamond

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Abstract

In this study thin Si(1 1 1) sample was prepared for top view observations by high resolution transmission electron microscopy (HRTEM). The very first steps of diamond nucleation on Si(1 1 1) by a HFCVD process are studied. We detect the polycrystalline growth of silicon carbide grains with a general pseudoepitaxic orientation SiC(2 2 0)//Si(2 2 0). They are relied by disoriented SiC grains. © 2001 Elsevier Science B.V.

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Le Normand, F., Arnault, J. C., Pecoraro, S., & Werckmann, J. (2001). Formation of β-SiC nanocrystals on Si(1 1 1) monocrystal during the HFCVD of diamond. Applied Surface Science, 177(4), 298–302. https://doi.org/10.1016/S0169-4332(01)00225-2

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