Citations of this article
Mendeley users who have this article in their library.
Get full text


Interaction between metallic zinc and Si wafer at moderately high temperatures was found to generate either concave wells or hollow pyramid-shaped protrusions on the (1 0 0) wafer surface. The formation of the wells is attributed to the dissolution of silicon at temperatures much lower than its melting point in the form of ZnSi eutectic. When the temperature was raised, Zn atoms in the eutectic droplets evaporated and Si atoms in them precipitated accordingly. If a droplet contained plenty of Si atoms, these Si atoms could encounter each other during precipitation at the surface of the droplet and condense into a hollow pyramid-shaped protrusion. © 2011 Elsevier Ltd. All rights reserved.

Author supplied keywords




Wu, Y., Zhang, G., & Xi, Z. (2011). Formation of Si wells and pyramids on (1 0 0) surface as a result of ZnSi interaction. Materials Science in Semiconductor Processing, 14(3–4), 302–305. https://doi.org/10.1016/j.mssp.2011.02.008

Register to see more suggestions

Mendeley helps you to discover research relevant for your work.

Already have an account?

Save time finding and organizing research with Mendeley

Sign up for free