Formation of textured sapphire substrates by self-arrangement process and wet etching for InGaAlN LEDs

0Citations
Citations of this article
5Readers
Mendeley users who have this article in their library.
Get full text

Abstract

We report a method of profiled sapphire substrate preparation and growth of InGaAlN light-emitting diode (LED) structures over these substrates. Sapphire substrates with textured front surface were prepared by the simple method of nanoscale gold drops formation on sapphire surface followed by etching in hot H3PO4acid. Comparison of blue LEDs grown on standard (flat) and profiled sapphire substrates in one epitaxial process shows significant increase in output power due to increased light extraction without deterioration of other LED characteristics. © 2008 Elsevier B.V. All rights reserved.

Cite

CITATION STYLE

APA

Sakharov, A. V., Lundin, W. V., Zavarin, E. E., Sinitsyn, M. A., Nikolaev, A. E., Lundina, E. Y., & Tsatsulnikov, A. F. (2008). Formation of textured sapphire substrates by self-arrangement process and wet etching for InGaAlN LEDs. Journal of Crystal Growth, 310(23), 5151–5153. https://doi.org/10.1016/j.jcrysgro.2008.07.055

Register to see more suggestions

Mendeley helps you to discover research relevant for your work.

Already have an account?

Save time finding and organizing research with Mendeley

Sign up for free