We present photoconductivity measurements at 77K and room temperature of various semi-insulating GaAs samples grown with the LEC technique in PBN. The presence of a sharp structure near mid-gap believed to be due to a native defect, is here explained as arising from dislocations in the sample. We also observe the presence of a metastable state in one of our samples containing Cr and Te dopants, and propose a tentative model involving lattice relaxation at a Te related complex. © 1982.
Masut, R., Farvacque, J. L., & Penchina, C. M. (1982). GaAs photoconductivity indicates native defect structure and metastability of Te complex. Solid State Communications, 44(10), 1413–1418. https://doi.org/10.1016/0038-1098(82)90021-7