GaAs photoconductivity indicates native defect structure and metastability of Te complex

  • Masut R
  • Farvacque J
  • Penchina C
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Abstract

We present photoconductivity measurements at 77K and room temperature of various semi-insulating GaAs samples grown with the LEC technique in PBN. The presence of a sharp structure near mid-gap believed to be due to a native defect, is here explained as arising from dislocations in the sample. We also observe the presence of a metastable state in one of our samples containing Cr and Te dopants, and propose a tentative model involving lattice relaxation at a Te related complex. © 1982.

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Authors

  • R. Masut

  • J. L. Farvacque

  • C. M. Penchina

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