GaAs photoconductivity indicates native defect structure and metastability of Te complex

Abstract

We present photoconductivity measurements at 77K and room temperature of various semi-insulating GaAs samples grown with the LEC technique in PBN. The presence of a sharp structure near mid-gap believed to be due to a native defect, is here explained as arising from dislocations in the sample. We also observe the presence of a metastable state in one of our samples containing Cr and Te dopants, and propose a tentative model involving lattice relaxation at a Te related complex. © 1982.