Gallium-rich precipitates (named as γ′-Ga(Fe)) were observed in Fe ion implanted and annealed GaAs. Transmission electron microscopy (TEM) analysis shows that these precipitates have an orthorhombic structure (γ-Ga-type) with lattice parameters of a = 1.04 nm, b = 1.298 nm and c = 0.511 nm. Most of these precipitates grow in GaAs as threefold-twinned hexagonal cylindrical particles with their hexagonal cylindrical axes running along the γ′-Ga(Fe)direction. The γ′-Ga(Fe) phase is stable either under the electron beam irradiation or at room temperature. © 2002 Acta Materialia Inc. Published by Elsevier Science Ltd. All rights reserved.
Sun, K. (2002). Ga-rich precipitates in Fe ion implanted GaAs. Acta Materialia, 50(14), 3709–3716. https://doi.org/10.1016/S1359-6454(02)00183-0