Ga-rich precipitates in Fe ion implanted GaAs

  • Sun K
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Abstract

Gallium-rich precipitates (named as γ′-Ga(Fe)) were observed in Fe ion implanted and annealed GaAs. Transmission electron microscopy (TEM) analysis shows that these precipitates have an orthorhombic structure (γ-Ga-type) with lattice parameters of a = 1.04 nm, b = 1.298 nm and c = 0.511 nm. Most of these precipitates grow in GaAs as threefold-twinned hexagonal cylindrical particles with their hexagonal cylindrical axes running along the [110]γ′-Ga(Fe)direction. The γ′-Ga(Fe) phase is stable either under the electron beam irradiation or at room temperature. © 2002 Acta Materialia Inc. Published by Elsevier Science Ltd. All rights reserved.

Author-supplied keywords

  • GaAs
  • Ion implantation
  • Microstructure
  • TEM
  • γ-Ga

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Authors

  • K. Sun

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