Gaussian line-shape analysis of the room temperature photoreflectance of GaAs/AlGaAs and InAs/GaAs multiple quantum wells

  • Lomascolo M
  • Cingolani R
  • Calcagnile L
 et al. 
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Abstract

The Gaussian dielectric function and its derivatives with respect to the main physical parameters have been studied to obtain a simplified line-shape formula for the high temperature photoreflectance spectra. The model has been used to fit the experimental data obtained from InAs/GaAs and GaAs/AlGaAs Multiple Quantum Wells. © 1993.

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