Gaussian line-shape analysis of the room temperature photoreflectance of GaAs/AlGaAs and InAs/GaAs multiple quantum wells

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Abstract

The Gaussian dielectric function and its derivatives with respect to the main physical parameters have been studied to obtain a simplified line-shape formula for the high temperature photoreflectance spectra. The model has been used to fit the experimental data obtained from InAs/GaAs and GaAs/AlGaAs Multiple Quantum Wells. © 1993.

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Lomascolo, M., Cingolani, R., Calcagnile, L., Di Giulio, M., Vasanelli, L., Brandt, O., & Ploog, K. (1993). Gaussian line-shape analysis of the room temperature photoreflectance of GaAs/AlGaAs and InAs/GaAs multiple quantum wells. Solid State Communications, 87(5), 481–485. https://doi.org/10.1016/0038-1098(93)90802-T

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