Grain boundary effects on the thermoelectric power of semiconducting films

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Abstract

A theoretical formulation of grain boundary effects on the thermoelectric power of semiconducting films is presented. The theory has been applied to explain the data for CdSxTe1-x films. © 1993.

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Bhattacharyya, D., Dutta, J., Chaudhuri, S., & Pal, A. K. (1993). Grain boundary effects on the thermoelectric power of semiconducting films. Materials Letters, 16(4), 218–221. https://doi.org/10.1016/0167-577X(93)90167-V

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