The properties of low bandgap a-(Si, Ge):H alloy materials and devices prepared using low pressure, high dilution ECR plasma deposition techniques have been investigated. Significant reduction in dihydride type bonding have been achieved by using low pressure, high ion flux conditions for alloys with Tauc gaps ranging from 1.1 to 1.4 eV. The defect density was measured using space charge limited current techniques and found to be in the low 1016/cm3eV range. Photo and dark conductivity measurements and subgap absorption reveal good material quality, with valence band Urbach energies below 50 meV. p/i/n junction devices were fabricated on stainless steel substrates, and show good fill factors and voltages. Subgap quantum efficiency techniques reveal low valence band Urbach energies in devices. © 2002 Elsevier Science B.V. All rights reserved.
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