The polycrystalline thin film of single-phase CuInS2have been made from Copper/Indium/Sulphide stacked layer at various heat-treatment in the nitrogen atmosphere. The structural and electrical properties of p-type chalcopyrite CuInS2thin films were investicated. Resistivity, Hall mobility and concentration of the fabricated CuInS2at optimum heat-treatment were 3 × 10-2[Ωcm], 0.1 [cm2V-1s-1] and 2 × 1020[cm-3], respectively. © 1995.
Mendeley saves you time finding and organizing research
Choose a citation style from the tabs below