Heat-treatment effect of chalcopyrite copper indium disulphide thin film growth

  • Kim S
  • Jeong W
  • Park G
 et al. 
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Abstract

The polycrystalline thin film of single-phase CuInS2have been made from Copper/Indium/Sulphide stacked layer at various heat-treatment in the nitrogen atmosphere. The structural and electrical properties of p-type chalcopyrite CuInS2thin films were investicated. Resistivity, Hall mobility and concentration of the fabricated CuInS2at optimum heat-treatment were 3 × 10-2[Ωcm], 0.1 [cm2V-1s-1] and 2 × 1020[cm-3], respectively. © 1995.

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Authors

  • S. K. Kim

  • W. J. Jeong

  • G. C. Park

  • Y. G. Back

  • Y. G. Jeong

  • Y. T. Yoo

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