Abstract
The polycrystalline thin film of single-phase CuInS2 have been made from Copper/Indium/Sulphide stacked layer at various heat-treatment in the nitrogen atmosphere. The structural and electrical properties of p-type chalcopyrite CuInS2 thin films were investicated. Resistivity, Hall mobility and concentration of the fabricated CuInS2 at optimum heat-treatment were 3 × 10-2 [Ωcm], 0.1 [cm2V-1s-1] and 2 × 1020 [cm-3], respectively. © 1995.
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CITATION STYLE
Kim, S. K., Jeong, W. J., Park, G. C., Back, Y. G., Jeong, Y. G., & Yoo, Y. T. (1995). Heat-treatment effect of chalcopyrite copper indium disulphide thin film growth. Synthetic Metals, 71(1–3), 1747–1748. https://doi.org/10.1016/0379-6779(94)03034-4
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