Hot-carrier relaxation in photoinjected ZnSe

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Abstract

A theoretical investigation of the excess energy dissipation of highly excited photoinjected carriers in zinc selenide (ZnSe) is presented. The calculations are performed by solving numerically coupled quantum transport equations for the carriers and the optical phonons in order to derive the evolution of their nonequilibrium temperatures, dubbed quasitemperatures (or nonequilibrium temperatures). It is shown that the carrier energy dissipation occurs in a picosecond time scale. © 2006 Elsevier Ltd. All rights reserved.

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Rodrigues, C. G. (2007). Hot-carrier relaxation in photoinjected ZnSe. Microelectronics Journal, 38(1), 24–26. https://doi.org/10.1016/j.mejo.2006.10.005

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